es2af u nit sy m bol characteristic c ase: smaf, molded plastic classification rating 94v-o super-fast recovery time ideally suited for automatic assembly surge overload rating to 50a peak low power loss es2af ? es2jf 2.0 a surf a ce mount glass passivated superfast diode feat ures ! g lass passivated die construction ! ! low forward voltage drop, high efficiency ! ! ! ! plastic case material has ul flammability m echanic al data ! ! te rminals: solder plated, solderable per mil-std-750, method 2026 ! polarity: cathode band or cathode notch ! marking: type number ! ! lead free: for rohs / lead free version m aximum r atings and electrical characteristics @t a =2 5 c unless otherwise specified p eak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rw m v r 50 100 150 200 300 400 600 v rm s reverse voltage v r( rm s) 35 70 105 140 210 280 420 v a v erage rectified output current @t l = 100 c i o 2. 0 a non-repet itive peak forward surge current 8.3ms single half sine-wave superimposed on rated load (jedec method) i fs m 50 a forward vo ltage @i f = 2. 0a v fm 0.95 1.25 1.7 v p e ak reverse current @t a = 25 c at rated dc blocking voltage @t a = 100 c i rm 5. 0 100 a revers e recovery time (note 1) t rr 35 ns t ypical junction capacitance (note 2) c j 45 pf t ypical thermal resistance (note 3) r jl 75 c/ w operat ing and storage temperature range t j, t st g -65 t o +150 c not e: 1. measured with i f = 0 . 5a, i r = 1.0a, i rr = 0.25a. see figure 5. 2. measured at 1.0 mhz and applied reverse voltage of 4.0 v dc. 3. mounted on p.c. board with 8.0mm 2 l and area. 1 of 2 es2af ? es2jf z ibo seno electronic engineering co., ltd. www.senocn.com s m af 3.60 3.20 2.80 2.40 a b c d f di m min max a b c d e f g a ll d imensions in mm e g 0.20 0.10 4.80 4.40 1.10 0.90 0.90 - 1.43 1.38 es2bf es2cf ES2DF es2ef es2gf es2jf w eight: 0.037 grams (approx.) a l l d a t a s h e e t
2 of 2 es2af ? es2jf es2af ? es2jf z ibo seno electronic engineering co., ltd. www.senocn.com 0.01 0.1 1.0 10 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 i , instantaneous forward current (a) f v , instantaneous forward voltage (v) fig. 2 typical forward characteristics f t = 25 c pulse width = 300 s j m 50v dc approx 50 ni (non-inductive) w 10 ni w 1.0 ni w oscilloscope (note 1) pulse generator (note 2) device under t est t rr settimebasefor5/10ns/cm +0.5a 0a -0.25a -1.0a notes: 1. rise t ime = 7.0ns max. input impedance = 1.0m , 22pf. 2. rise time = 10ns max. input impedance = 50 . w w fig. 5 reverse recovery time characteristic and test circuit (+) (+) (-) (-) 0 02 5 50 75 100 125 150 175 i , average fwd rectified current (a) (a v) t,lead temperature ( c) fig. 1 forward current derating curve l singlephasehalfwave resistiveorinductiveload - es2af-ES2DF - es2ef-es2gf es2jf 1.0 2. 0 0 10 20 30 1 10 100 rof k aep,i )a(tnerrucegrusdraw msf number of cycles a t 60hz fig. 3 surge current derating curve single half-sine-wave (jedec method) 40 50 60 0.1 1.0 10 100 1000 0 40 80 120 (tne rrucesreversuoenatnatsni,i )a r percent of ra ted peak reverse voltage (%) fig. 4 typical reverse characteristics t = 125 c j t = 25 c j a l l d a t a s h e e t
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